Abstract
The design and fabrication methods utilizing soft photocurable nanoimprint lithography to realize single longitudinal mode distributed feedback transistor lasers are investigated. Coupled-mode theory and the effective index method are used to determine accurately the periodic dimensions necessary to integrate a surface grating in the top emitter AlGaAs confining layers of an InGaP/GaAs/InGaAs heterojunction bipolar transistor laser. Electrical and optical device data confirm the design methods. The distributed feedback device produces continuous wave laser operation with a peak wavelength λ=959.75 nm and threshold current IB=13 mA operating at −70 °C. For devices with cleaved ends a side mode suppression ratio >25 dB has been achieved.
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