Design and Mechanism of Embedding Specific Carbon Nanotubes in Sputtered Sandwiched InGaZnO Thin-Film Transistors

Abstract

Amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with high mobility are highly desirable to achieve high-speed operation in active-matrix displays and large-area sensors. Only a few works provide potential solutions. In this letter, we have embedded carbon nanotubes (CNTs) into sputtered a-IGZO film to form a-IGZO/CNT/a-IGZO (ACA) sandwiched channel. In the ACA channel, the CNT percolation networks connected by the a-IGZO film work as high-speed carrier paths to enable faster transport of carriers during the ON state, while it does not degrade the leakage performance during the OFF state. The type and the embedding location of the CNT percolation network are critical to determine the ACA device performance, which is analyzed and verified by experiment and simulation. The optimum ACA design has approximately doubled the mobility and the ON-current density of the TFT. The design owns relatively better uniformity and provides a high-speed TFT solution for the advanced electronics.