Abstract
Low aspect-ratio nano/micro-hemisphere surface texturing is introduced for improving light management in ultrathin GaAs solar cells. A 200 nm thick film textured by the optimal GaAs nano/micro-hemisphere array with both the hemisphere diameter and array periodicity of 500 nm can achieve >90% light absorption from 1.44 to 2.5 eV, lying in the high photon density energy regime of the solar spectrum for GaAs. The excellent light confinement and low aspect ratio, which is thus convenient for conformal deposition of electrodes for efficient photogenerated carrier collection of the proposed structure will facilitate realization of highly efficient and cost-effective ultrathin GaAs solar cells.
Highlights
Design and mechanism of cost-effective and highly efficient ultrathin (< 0.5 μm) GaAs solar cells employing nano/microhemisphere surface texturing
Strong light reflection (> 30%) originating from the large refractive index difference between GaAs and the circumstance, e.g., air or vacuum for spacecraft applications demands the development of advanced antireflection coatings (ARCs) suppressing light reflection in a wide energy range and with high stability and/or long-term endurance.[10,11,12]
Aiming at lowering material consumption and quality requirement, and at efficient and stable antireflection design, we propose a nano/micro-hemisphere array textured ultrathin filmbased GaAs solar cell configuration
Summary
Design and mechanism of cost-effective and highly efficient ultrathin (< 0.5 μm) GaAs solar cells employing nano/microhemisphere surface texturing. Low aspect-ratio nano/micro-hemisphere GaAs array surface textures are employed to enhance light absorption through suppressing both light reflection and transmission.
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