Abstract
In order to improve the thermal stability in AlGaN-channel two-dimensional electron gas (2DEG) heterostructures, we newly designed strain-controlled quaternary AlGaInN barrier layers, and then we grew them by metalorganic chemical vapor deposition. A 2DEG density as high as 2.5 × 1013 cm−2 and a good surface morphology were obtained for an (Al0.64Ga0.36)0.976In0.024N/Al0.19Ga0.81N heterostructure, in which in-plane tensile strain in the barrier layer was estimated to be 0.51%. It was also confirmed that the (Al0.64Ga0.36)0.976In0.024N/Al0.19Ga0.81N heterostructure showed an excellent thermal stability in its 2DEG properties even at high temperatures up to 900 °C. As a result of their thermal stability improvement, we were also able to confirm that the contact resistance was improved by applying high-temperature annealing.
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