Abstract
In this work, efficacy of source material engineering (SME) is examined to boost the performance of conventional charge plasma (CP) based double gate (DG) TFET by utilizing a low band gap material, Magnesium Silicide (Mg2Si), in its source region. It is perceived from simulation results obtained that the proposed device presents exceptional performance parameters in terms of ION, SS, ION/IOFF ratio, and Vth when compared to conventional Si-based CP-DGTFET. Additionally, the same device is analysed for bio-sensing applications by altering the dielectric region underneath the gate electrode. Neutral biomolecules (biotin, APTES, Keratin) are inserted in the nanocavity created to accommodate them. From thorough simulations, ION sensitivity (SION) of 407.7 and threshold voltage sensitivity (SVth) of 0.52V is obtained for Keratin (k = 8) biomolecule. Thus proposed Mg2Si source CP-DGTFET device is well sensitive toward neutral biomolecules.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
