Abstract
This paper introduces a novel topology of the proposed converter that has these merits: (i) the topology of the converter is based on conventional boost and buck-boost converters, which has caused its simplicity; (ii) the voltage gain of the converter has provided higher values by the lower value of the duty cycle; (iii) due to the use of high-efficiency conventional topologies in its structure, the efficiency of the converter keeps its high value for a great interval of duty cycle; (iv) besides the increase of the voltage gain, the current/voltage stresses of the semiconductors have been kept low; (v) the continuous input current of this converter reduces the current stress of the capacitor in the input filter. It is worth noting that the proposed converter has been discussed in both ideal and non-ideal modes. Moreover, the operation of the converter has been discussed in both continuous/discontinuous current modes. The advantages of the converter have been compared with recently suggested converters. In addition, the different features of the converter have been discussed for different conditions. In the small-signal analysis, the appropriate compensator has been designed. Finally, the simulation and experimental results have been reported for 90 W output power, 90 V output voltage, 3-times voltage gain, and 100 kHz switching frequency.
Highlights
It is worth noting that the behavior of the voltage gain in the non-ideal mode of components depends on the quality of the circuit elements and output power
Due to the use of conventional converters, it was capable of providing a high value efficiency 98.52%
It was discussed that the proposed converter was capable of providing an efficiency higher than 90 for a great interval of the duty cycle
Summary
Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations. The semiconductor in these two topologies suffers from high voltage stress Another type of quadratic converter with continuous input current has been reported in [22]. The higher value of the voltage gain besides the high efficiency, low voltage/current stress of the semiconductors, and use of a low value of the duty cycle is a remarkable point in comparison with [15,16,17,18,19,20,21,22,23,24,25,26] which has been deeply explained in the fourth and fifth sections. The simulation and experimental results have been extracted and discussed in the eighth section
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