Abstract
We have designed multilayer heterostructure (MH) based on three quantum well GaAs/Al0.15Ga0.85As active module with diagonal transitions and optimized oscillator strength – 0.425. Furthermore, we have developed a method for the fabrication of terahertz quantum cascade laser (THz QCL) with double metal waveguide via low-temperature In-Au wafer bonding followed by SI-GaAs substrate removal. ICP RIE in BCl3/Ar has been used to obtain laser ridges (widths 50-200 mkm) with vertical sidewalls. We investigate the dependence of the MH energy band structure on the electric field and thermal properties of terahertz quantum cascade lasers (THz QCL) under different operation conditions.
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