Abstract
In this paper, tantalum pentoxide (Ta2O5) has been investigated as the charge-storage dielectric for discrete, multibit memory applications. Two Ta2O5 containing dielectric stacks, Al2O3/Ta2O5/SiO2 and Al2O3/Ta2O5/Al2O3/Ta2O5/SiO2, have been fabricated and measured. Both structures exhibited excellent nonvolatile memory characteristics: fast program/erase speed with significant flat-band voltage shift at 1 μs, long retention, and good endurance. Interesting multiple staircase memory characteristics observed in the devices with two layers of Ta2O5 exhibit multiple, discrete charge-storage states. Such an integration of multibit in one cell is very attractive for developing high-density nonvolatile memory.
Published Version
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