Design and Fabrication of Rad-hard Low Power CMOS Temperature Sensor for Space Applications at 180nm

Abstract

In this paper we presented a CMOS proportional to absolute temperature (PTAT) sensor using subthreshold MOS devices and output of PTAT is 1Vpp to match the dynamic range of next stage data acquisition systems. The circuit is first evaluated using SPICE with 0.18μm CMOS device parameters across a wide-temperature range from −40°C to 125°C. The fabricated device occupies a die area of 0.013mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> (=170µm X 78µm) and consumes power less than 15µW with 3.3V power supply. Radiation effects characterization and analysis has been done on PTAT.