Design and fabrication of photovoltaics based on MFS (Ag/BaTiO3/silicon p-type) structure

Abstract

The experiment was carried out by growing BaTiO3 (Undoped or Li-doped) on p-type Si(100) substrates using the Chemical Solution Deposition (CSD) method and spin coating at a rotational speed of 3000 rpm for 60 s, followed by heating at 850 °C. The characterization results show that the bandgap energy value of the thin film due to lithium doping reduces the bandgap energy value. This is presumably because the donor atom added to a semiconductor causes the allowable energy level to be slightly below the conduction band. The presence of this new band causes the thin film bandgap energy to decrease with a five-valent tantalum dip. The morphological properties showed that the BaTiO3/Si(100) thin film particles in the deposited lithium had a fairly homogeneous grain. With the addition of lithium acetate as a binder into barium titanate, the grain size is getting smaller because it is suspected that the lithium-ion radius is smaller than the barium-ion radius. Measurement of I-V on the thin film shows that the output voltage value increases with more light intensity hitting the surface of the thin film. The greater the light intensity, the greater the energy of the photons, so the electrons are easier to jump. The three things above (both electrical and morphological properties) conclude that the thin films grown have the potential for photovoltaics.