Abstract
We report on the design, fabrication, and characterization of low-loss antireflection (AR) structures for Si windows in 10–30 THz. Based on scattering-matrix simulations and effective medium theory, optimal Si filling ratios are presented for AR structures composed of Si-rod arrays and holey-Si films with different periods. To reduce the difficulties in fabrications, we fabricated Si rod arrays with optimal AR parameters. Experiments show that by using a single layer of AR structure, the transmission of Si wafer can be enhanced by 38% at 20 THz, agreeing well with numerical simulations.
Highlights
Terahertz (THz) radiation, typically referred to as the frequencies from 0.1 to 30 THz, is important in applications including molecular biological science, medical imaging, astronomy, and communication systems.[1,2,3] In particular, construction of a compact high-power monochromatic THz source at high frequencies (5–30 THz) has attracted increasing attention
We report on the design, fabrication and characterization of low-loss AR structures for Si windows in the 10–30 THz region
Based on scattering-matrix simulations, we present the optimal Si filling ratios fop for AR structures of Si-rod arrays and holey Si films with different periods
Summary
Terahertz (THz) radiation, typically referred to as the frequencies from 0.1 to 30 THz, is important in applications including molecular biological science, medical imaging, astronomy, and communication systems.[1,2,3] In particular, construction of a compact high-power monochromatic THz source at high frequencies (5–30 THz) has attracted increasing attention. Design and fabrication of low-loss antireflection structures for Si windows in 10–30 THz Based on scattering-matrix simulations, we present the optimal Si filling ratios fop for AR structures of Si-rod arrays and holey Si films with different periods.
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