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Abstract
A four-level Fresnel lens and piezoelectric transducer were fabricated as an ejector using focused ultrasonic energy. The influence of the fabrication parameters on the profile of the focusing lens was investigated. Highly c-axis (002)-oriented ZnO films were successfully deposited on Pt (annealed)/Ti/SiO2/Si substrates under reasonable conditions, such as RF power of 178 W, substrate temperature of 380 °C, deposition pressure of 10 mTorr, and Ar:O2 gas flow ratio of 50%. These conditions were applied and confirmed through investigating the influence of deposition parameters on the properties of ZnO films.
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