Abstract
Two different diamond field emitter structures were designed, fabricated and characterized. Boron-doped p-type crystalline diamond film grown by hot filament chemical vapor deposition (HFCVD) is used as an emitter material in both cases. A five mask fabrication process is employed using diamond film technology compatible with Si integrated circuit (IC) processing. Photoresist is used as a sacrificial layer to produce a vacuum gap between anode and cathode. Current versus voltage (I-V) data, measured at 10/sup -6/ Torr, shows Fowler-Nordheim (F-N) field emission behavior. The current density measured at 0.2 MV/cm is approximately 0.1/spl sim/0.5 A/cm/sup 2/.
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