Abstract
Strontium (Sr)-doped SnO2(Sr:SnO2) insulating thin films of various concentrations were prepared by sol-gel spin-coating technique and were studied by x-ray diffraction (XRD), Field emission scanning electron microscope (FE-SEM), Ultra Violet-visible spectroscopy (UV-vis) and current-voltage (I-V) characteristics. The XRD pattern shows that the line-broadening effect would increase with an increase in Sr concentration and confirms the tetragonal structure of the films. The SnO2 and Sr-SnO2 thin films exhibited spherical shape of grains and increase in film surface roughness by the FE-SEM and AFM images. UV-vis analysis exposes that band gap (Eg) value decreases with increase in Sr concentration. DC electrical analysis reveals that the high conductivity of 4 wt% in Sr:SnO2 thin film. Schottky barrier diodes (SBDs) were designed and performed for all the films. From the I-V analysis, the barrier height (ΦB) and ideality factor (n) were calculated for Al/Sr:SnO2/p-Si SBD, which reveals that the former has increased from 0.855 to 0.898 eV with increase in wt% of Sr concentration.
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