Abstract
AbstractA single‐ended gate mixer with a high conversion gain, low dissipated power, wide dynamic range and good isolation factor is designed and tested. The mixer is composed of a hairpin‐line band‐pass filter, an input/output matching circuit, a GaAs MESFET transistor, and a lumped element low‐pass filter to convert the radio frequency (RF) into an intermediate frequency (IF). In the non‐linearity analysis of a GaAs MESFET, the novel method with a harmonic balance technique is used to analyze the operating characteristics of a mixer circuit. The designed mixer outperforms a general mixer for a down converter in wireless applications. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 35: 189–193, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10553
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