Abstract
The SOI LDMOSFETs with step doping profiles in drift region have been experimentally investigated. Uniform, single-step and two-step doped drift regions have been designed and fabricated on a same bonded SOI wafer with the top silicon layer of 3 μm and buried oxide layer of 1.5μm. The experimental devices with two-step doping profile have a breakdown voltage in access of 250V and specific on-resistance of 1.6 Ωmm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Furthermore, the breakdown characteristic and forward conduction characteristic for the various step doping profiles were measured and compared. The results show two-step doping can enable increase in the breakdown voltage by 40% and decrease in on-resistance by 16% in comparison to the conventional uniformly doped drift device.
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