Abstract
Embedded non-volatile memory (NVM) integrated in the back-end of the line process are of high interest, particularly for rugged environments. This work demonstrates the use of tantalum nitride micro-beams as antifuse one-time-programmable (OTP) NVM. The NVM operation is based on OPEN/CLOSE cantilever switch and one-time or multi-time programmable storage functions could be achieved. It only needs a single mask process and can be integrated above IC. Typical fusing current is 1mA, operating voltage is 4V and the measured contact resistance is lower than 2kΩ. A hybrid 1-transistor/1-micro-beam per bit memory array is proposed, for back-end compatible and low-cost OTP NVM integration. Due to the charge storage-free and bistable MEMS operation, the NVM operation is insensitive to high-temperature or radiation. This kind of memory device may be useful for space and harsh environment application.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
