Design and characterization of Schottky barrier double gate based p-IMOS

Abstract

In this paper, a Schottky barrier double gate impact ionization metal oxide semiconductor (SBDG-IMOS) transistor with reduced subthreshold swing (SS), gate threshold voltage (VGT), and operational voltage (VOp) is introduced. The proposed transistor benefits from approximately one order of magnitude ON current enhancement with ON/OFF current ratio of 1.3 × 107 verified by device simulations. Using of double gate structures and silicide type source results in higher electric field inside channel and intrinsic region which enhances the impact ionization rate in the intrinsic region. Hence, a gate threshold voltage of 1.27 V and steep current–voltage characteristics with SS of 1.9 mV/dec are achieved. According to parasitic resistance reduction in the source region due to the silicide usage in the source, the higher voltage difference between source and drain appears across the intrinsic region enhancing the electric field in intrinsic area so that the source-drain voltage which initiates the avalanche breakdown is reduced to 7.7 V.