Two-Dimensional Analytical Threshold Voltage and Subthreshold Swing Models of Undoped Symmetric Double-Gate MOSFETs

H.A El Hamid,J.R Guitart,B Iniguez

doi:10.1109/ted.2007.895856

Two-Dimensional Analytical Threshold Voltage and Subthreshold Swing Models of Undoped Symmetric Double-Gate MOSFETs

H.A El Hamid, J.R Guitart + Show 1 more

https://doi.org/10.1109/ted.2007.895856

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Journal: IEEE Transactions on Electron Devices	Publication Date: Jun 1, 2007
Citations: 117

Affiliation: Rovira i Virgili University

#Symmetric Double-Gate MOSFETs #Subthreshold Swing + Show 8 more

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Abstract

We have developed analytical physically based models for the threshold voltage [including the drain-induced barrier lowering (DIBL) effect] and the subthreshold swing of undoped symmetrical double-gate (DG) MOSFETs. The models are derived from an analytical solution of the 2-D Poisson equation in which the electron concentration was included. The models for DIBL, subthreshold swing, and threshold voltage roll-off have been verified by comparison with 2-D numerical simulations for different values of channel length, channel thickness, and drain-source voltage; very good agreement with the numerical simulations has been observed

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