Design and characterization of GaN p-i-n diodes for betavoltaic devices

Abstract

The performance of gallium nitride (GaN) p-i-n diodes were investigated for use as a betavoltaic device. Dark IV measurements showed a turn on-voltage of approximately 3.2V, specific-on-resistance of 15.1mΩcm2 and a reverse leakage current of −0.14mA/cm2 at −10V. A clear photo-response was observed when IV curves were measured under a light source at a wavelength of 310nm (4.0eV). In addition, GaN p-i-n diodes were tested under an electron-beam in order to simulate common beta radiation sources ranging from that of 3H (5.6keV average) to 63Ni (17keV average). From this data, we estimated output powers of 53nW and 750nW with overall efficiencies of 0.96% and 4.4% for our device at incident electron energies of 5.6keV and 17keV corresponding to 3H and 63Ni beta sources respectively.