Abstract
In this work we present results and analysis concerning the processing and characterization of Gallium Nitride (GaN) thin films (TF) grown on Si (111) substrates by pulsed laser deposition technique (PLD), which were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) and Raman spectroscopy (RS). The GaN films showed the hexagonal phase with a preferential orientation in the (100) direction, SEM pictures showed a cauliflower-like morphology. Room temperature PL studies showed the so called GaN-yellow band, at 2.29 eV, as well as the donor-acceptor (DA) pair luminescent transition around 3.0 eV. At 10 K, phonon replicas, separated by 69 meV, were observed. By RS, the optical mode on 710 cm-1 was observed, corresponding to the longitudinal optical phonon, A1(LO), as reported for this material.
Highlights
The nitride semiconductors, Gallium Nitride (GaN), have useful applications as light-emitting devices and as robust semiconductors for possible uses in transparent microelectronics[1]
2θ=40° we did not found any diffraction signal. As it can be seen there are well defined diffraction peaks due to GaN film[12], the peak at 31.7 is related to the (100) plane, whereas the peak at 34.4 corresponds to the (002) plane, while the peak at 36.2 is associated to the (101) plane; all of them are related to the wurtzite crystalline structure according to PDF 01-073-7289 card
We have processed and studied GaN films grown by pulsed laser deposition technique (PLD) on Si (111) substrates, in a N2 atmosphere inside the PLD-chamber growth
Summary
The nitride semiconductors, GaN, have useful applications as light-emitting devices and as robust semiconductors for possible uses in transparent microelectronics[1]. With PLD technique is possible to grow thin films into high vacuum level, at low substrate temperatures and at fast growth rate of the order of Å/pulse, to obtain stoichiometric films. Some results concerning the growth of GaN films by PLD were reported by Vinegoni et al[4]. They got films with small homogeneously distributed granular structures. In order to avoid delamination of thin films grown by PLD, it is usually required to have a good crystalline lattice match between the substrate and the GaN film, and simultaneously proper growth conditions, mainly high temperature (700- 850 oC) of the substrate. The most employed substrate is sapphire with the (0001) direction[8,9], silicon represents an alternative as substrate, because it has advantages over sapphire, like cost, high thermal conductivity, large area substrates, among others[10,11]
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