Abstract
In this paper, a first demonstration of the optical triggering of a 10 kV 4H-SiC Bipolar Junction Transistor is reported. A laser emitting UV (349 nm) has been used for the generation electron-hole pairs within the device. A current density of about 20 A.cm-2 has been obtained. This low value in comparison with 100 A.cm-2 for “conventional” BJT is due to the narrow pulse width (5 ns). The current waveform shows the effect of the carrier lifetime in the base and collector regions. From these measurements, we have extracted the IC (VCE) characteristics for different laser optical power and the switch-on time which is about 1 µs.
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