Abstract
Silicon piezoresistive stress sensors can be used for in situ stress measurements during fabrication and encapsulation of the silicon die. These sensors are fabricated in the silicon die using the conventional silicon processing steps. In this paper we describe a stress sensor or a 3-D micro-stain gauge for such applications. We shall describe the design and fabrication of the test chip, experimental results as well as the detailed calibration procedures using a four-point bending (4PB) fixture. The resistance of stress sensors was found to vary linearly to the applied stress. The piezoresistive coefficient was calculated and found to agree with the reported values for silicon. The problems associated with the calibration process was also discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
