Abstract

In this paper, we present our work developing a family of silicon-on-insulator (SOI)–based high-g micro-electro-mechanical systems (MEMS) piezoresistive sensors for measurement of accelerations up to 60,000 g. This paper presents the design, simulation, and manufacturing stages. The high-acceleration sensor is realized with one double-clamped beam carrying one transversal and one longitudinal piezoresistor on each end of the beam. The four piezoresistors are connected to a Wheatstone bridge. The piezoresistors are defined to 4400 Ω, which results in a width-to-depth geometry of the pn-junction of 14 μm × 1.8 μm. A finite element method (FEM) simulation model is used to determine the beam length, which complies with the resonance frequency and sensitivity. The geometry of the realized high-g sensor element is 3 × 2 × 1 mm3. To demonstrate the performance of the sensor, a shock wave bar is used to test the sensor, and a Polytec vibrometer is used as an acceleration reference. The sensor wave form tracks the laser signal very well up to 60,000 g. The sensor can be utilized in aerospace applications or in the control and detection of impact levels.

Highlights

  • Nowadays, high-g sensors have become an important measurement unit in technological applications

  • The sensor is realized with a double-clamped beam form and has been successfully fabricated using silicon micromachining andadiffusion techniques

  • The fabricated was tested with a shock

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Summary

Introduction

High-g sensors have become an important measurement unit in technological applications. A novel high-g sensor with double-clamped beam was developed at at Fraunhofer IZM with a measurement range of up to 60,000 g. This paper describes the concept, the Fraunhofer with a measurement up device to 60,000 g This paperatdescribes thethis concept, simulation, IZM and the process flow of the range sensor,ofwith characterization the end. The process flow of the sensor, with device characterization at the end For with this g sensor, the piezoresistive effect is used. It is a stable and well-known state-of-the-art method, a simple evaluation unit and precise accuracy Important aspects of this developed sensor are its high with a simple evaluation unit and accuracy. The production process of this sensor family aims to be precise and low-cost to fulfill economic requirements and make it accessible for a variety of new applications.

Sensor Design
90. The high influence of temperature on such piezoresistors is accepted
Fabrication Flow of the Sensor Wafer
Device Characterization
Infrastructure
Conclusions

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