Abstract
The efficiency of an InGaN light-emitting diode (LED) is critically dependent on internal electric field (IEF) exhibiting in its active region. In the present work we examined the properties of the NSSP light emitters. Also we developed a novel InGaN LED structure based on a Nano-structured semi-polar (NSSP) GaN template. This new structure can be fabricated on a mature c-plane substrate including low cost sapphire without any ex situ patterning. From this approach we got results in which we can see that with the help of RT PL, 30% enhancement in IQE will be observed in NSSP MQWs as compared to c-plane planar MQWs with the help of SEM and TEM imaging tools. We have successfully ramped up an MOCVD tool for the epitaxial growth of GaN LEDs for this study.
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