Abstract
In this research work, Amorphous Indium–Gallium–Zinc–Oxide (α-IGZO) thin-film transistor consisting of Tri-Active Layer (TAL) channel have been designed in a double-gate structure. The electrical performance of the novel device structure has been analyzed with its output and transfer characteristics, at different overlap and offset length between gate and Source-Drain (S-D) contacts. The resulted parameters have a better agreement to the device characteristics including high ION/IOFF at offset of the thin-film transistor (TFT) of order 1011, high channel mobility is 16.08 cm2/V.s in overlap, while it is less than 6 cm2/V.s for the offset TFTs. The superior electrical behavior of the novel double-gate TAL TFT have been incorporated. Later on, the device application in a new Active Matrix –Organic Light Emitting Diode (AMOLED) pixel circuit has been proposed.
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