Abstract
This paper presents the use of available airbridge process used for active components. The design and analysis of air bridge spiral circular inductors for Gallium Nitride (GaN) based Monolithic Microwave Integrated Circuits (MMICs) to be fabricated on Silicon Carbide (SiC) substrate of thickness 100μm. These air bridge circular inductors have been designed and analyzed to give the optimum value of inductor parameters by using the existing 0.25 μm fabrication process. The Q-factor achieved is 104 at 33.1 GHz and SRF is 74.6 GHz for 1-turn inductor of 12μm track width and spacing. There is 93% increase in Q-factor with air bridge as compared to without air bridge. Q-factor achieved is 54 at 25.1 GHz and SRF is 46.8 GHz of without air bridge. The inductors of widths 12 μm from 1 to 5 turns in steps of 1 turns have been simulated using ADS (Advanced Design System) software. The inductance value of 0.32 nH to 5.6 nH have been obtained for one turn and five turn of 12 μm width and spacing inductors respectively. This work is useful to select the appropriate inductor for design of GaN based MMICs up to Ku band.
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