Abstract
Due to reduced thickness of absorbing region, thin film solar cells have weak absorption of incident light and hence, low conversion efficiency. In this scenario, light trapping mechanism is demanded which includes textured top layer, distributed Bragg reflector, metal based nanoparticles/thin films, diffraction grating etc. Presently, GaAs thin film solar cells has limited absorption in an infrared region and so needs attention to address this issue. In this work, we propose a design of GaAs thin film solar cell of thickness 500 nm with silver nano grating which is integrated at the bottom. The designed solar cell showed strong field due to supported plasmonic effect. An enhancement in short-circuit current density i.e. 24.79 mA/cm2 and 27.15 mA/cm2 has been obtained for TE and TM polarizations.
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