Abstract
In this present study, junctionless vertical tunnel field-effect transistor (JL-VTFET) with catalytic metals as gate contacts is proposed for gas sensing applications. The vertical double-sided gate architecture provides better gate controllability over conventional TFETs for band-to-band tunneling (BTBT). An architecture for n-channel JL-VTFET with Palladium (Pd) as gate metal is analyzed for Hydrogen sensing, while Cobalt (Co) and Molybdenum (Mo) metals as gate contacts are analyzed for Ammonia sensing. P + pockets are created near the source region by using work function values befitting the aforementioned catalytic metals. Characteristics of the proposed structure are studied considering the electric field, surface potential, and energy bandgap graphs concerning adsorption of gas molecules, using Silvaco ATLAS TCAD simulator. Simulation results of JL-VTFET with 50-nm gate length show good sensitivity calibrations (SIdoff ~ 1.99 × 103, 2.09 × 103 and 6.43 × 102) and high Idon/Idoff ratio (~ 4.3 × 109, ~ 2.01 × 107 and 1.33 × 1012) for Co, Mo and Pd as gate metals, respectively
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