Abstract
A differential variable gain amplifier (VGA) for wideband baseband signals has been designed, analyzed, and implemented in a 0.25- $\rm \mu m$ InP double heterojunction bipolar transistor technology with $f_{T}/f_{\mathrm{ max}}$ of 370/650 GHz. The 3-dB frequency bandwidth is measured to be 40 GHz with a maximum gain of 31 dB, resulting in a gain bandwidth product (GBP) of 1.4 THz, four times higher than previously reported GBP from a Gilbert cell-based VGAs. Furthermore, it measures a gain control range of 44 dB, a noise figure of 6.2 dB, an output third-order intercept point of 17 dBm, and a total power consumption of 350 mW from a single −7-V supply. With pseudorandom binary sequence test pattern signals, a clear open eye at 44 Gb/s was observed. The complete circuit, including on-chip integrated bias network and pads, measures 0.77 $\rm mm^{2}$ . We analyze the VGA for the 3-dB bandwidth and GBP by the use of zero-value time constants method to analytically identify the maximum GBP with respect to the design parameters and current bias.
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More From: IEEE Transactions on Microwave Theory and Techniques
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