Design and Analysis of a Uniform Meander RF MEMS Switch

Abstract

This paper projected to uniform meander RF MEMS capacitive shunt switch design and analysis. The less pull in voltage is obtained in flexure type membrane by proposed RF MEMS Switch. The materials selection for the dielectric layer and beam is explained in this paper and also shown the performance depends on materials utilized for the design. The good isolation of -31dB is achieved for the pull-in voltage of 11.97V with a spring constant of 2.38N/m is produced by the switch and is obtained by the optimization process at a frequency of 38GHz.