Abstract
In this letter, we proposed a low power, high gain, compact ultra-wideband (UWB) low noise amplifier (LNA) using TSMC 0.18-μm CMOS technology.To satisfy the wide input matching and high voltage gain requirements with low power consumption, a resistive current reused technique is utilized. The proposed UWB LNA has a voltage gain of 10.4–15.5 dB and a noise figure (NF) of 3.3–4.5 dB over the frequency band of interest (1–8 GHz). The total power consumption of the proposed UWB LNA is 10.4 mW from a 1.4 V supply voltage, and the chip area is 0.8 mm × 0.5 mm. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:345–348, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25747
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