Abstract
A silicon-based n-p-n-type hybrid plasmonic modulator operating at telecom wavelength of 1550 nm is theoretically investigated in this paper. The proposed modulator is dependent on the integration of a 1- $\mu\text{m}$ -long n-p-n-type Al/p-Si hybrid plasmonic waveguide with Si waveguides. It is demonstrated that when the p-type silicon is highly doped, it shows metal-like properties which can support the propagation of surface plasmon polariton waves. The simulation results show that the output power of TE (TM) mode decreases from −7.6 dB (−2.5 dB) to −31.5 dB (−7.5 dB) when the Al stack is 0.2 $\mu\text{m}$ high and the carrier concentration in p-Si is set to be $1\times 10^{21} \text{cm}^{-3}$ , which is achieved with a voltage increase from 0 to 1.2 V. Such a plasmonic modulator not only depends on the propagation loss due to electroabsorption effect but takes advantage of the coupling loss raised by modal mismatch as well, which leads to a high modulation efficiency.
Published Version
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