Design and analysis of 0.9 and 2.3‐GHz concurrent dual‐band CMOS LNA for mobile communication

Abstract

SummaryA complementary metal‐oxide‐semiconductor (CMOS) dual‐band low‐noise amplifier (LNA) for 2G/3G/4G mobile communications is presented. It operates at 0.9 and 2.3 GHz of frequencies. The dual‐band operation is achieved by adding a modified notch‐filtering path in the wideband LNA. The modified notch‐filtering path does not require additional power to cancel the signals of the stop band frequency. The impact of the filtering path in the proposed LNA is analyzed. Improved results are observed in dual bands of frequency. Sustainability of the LNA under process corner variation and temperature variation are examined, and it is found to be suitable for the application. The proposed LNA is designed at 90‐nm technology in Cadence Virtuoso with 0.5 and 0.6‐V supply. The post‐layout simulation shows 22 dB of gain (S21), 2 dB of Noise Figure (NF), and −5.5 dBm of IIP3 at the high band. In the low band, 24 dB of S21, 2.7 dB of NF, and −6.65 dBm of IIP3 are reached. The circuit consumes 5.2 mW of power and 0.0918 mm2 of area. The efficiency of the LNA is estimated by the figure of merit, and comparable results are secured in the proposed work.