Abstract
In this study, dielectric properties of graded and non-graded InGaN/GaN multi quantum wells (MQWs), grown on sapphire(Al2O3) wafer by Metal Organic Chemical Vapor Deposition (MOCVD) technique, are investigated. In order to notice graded layer effect on characteristics of MQWs some of GaN layers are grown by doping In atoms. Dielectric function of films are determined by Swanepoel envelope method. Real and imaginer dielectric coefficient of the films are calculated by using refraction index and extinction coefficient. Differences in refraction index values are discussed for graded and non-graded samples. During determination of dielectric function variations of complex and imaginer dielectric coefficients with photon energy are shown for both samples
Highlights
Compounds such as GaN and InGaN formed by nitrite based semiconductors are taking attention since the beginning of ninetees
InGaN/GaN multi quantum wells (MQWs) are grown on sapphire wafer by Metal Organic Chemical Vapor Deposition (MOCVD) as In graded and non-graded structures
Transmission spectras of the samples in this study are given in reference (Bilgili et al, 2019). In this reference refraction and extinction coefficients of samples are determined from Swanepoel envelope method
Summary
Compounds such as GaN and InGaN formed by nitrite based semiconductors are taking attention since the beginning of ninetees. During growth of GaN layer on sapphire, because of lattice mismatch and the difference between thermal expansion coefficients, defects such as cracks may occur These defects affects the performance of the device in a bad way but devices formed by nitrite based semiconductors performs well at high temperature and frequency they have such defects. They are prefered because of this property (Williams et al, 1969). Even a small change in refraction index makes serious shift in spectral response (reflection and transmission) of optical components of thin films For this reason, accuracy of complex refraction index and thickness is important in terms of production of optical components successfully (Selim et al, 1977., Anthony et al, 1985). By the help of optical constants gained from Swanepoel envelope method (1983), dielectric coefficients are calculated
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
