Abstract
Multi quantum wells (MQWs) structures based on (Si)GeSn hold promise for near- and mid-infrared light emission and photodetection applications on the Si platform. An MQW consisting of four GeSn/SiGeSn repetitions is grown by chemical vapor deposition (CVD) on Ge/Si(001) virtual substrate to study the interface quality and its effect on optical properties. Intermixing at GeSn/SiGeSn interfaces is found by secondary ion mass spectrometry, which is notably stronger at larger depths. The depth-dependent photoluminescence (PL) characteristic of the MQWs was performed by utilizing different excitation wavelengths and by tailoring the MQW thickness using H2O2-based etching. The results clearly indicate that PL emission is relatively weaker for the QWs with stronger intermixing.
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