Abstract
In this review we show that the transition width of hetero-interface is successfully investigated by AES combined with ion sputtering. Due to its superior sensitivity, SIMS is the most powerful method for the determination of the depth distribution of dopants. Sputter depth profiles determined at hetero-interfaces are broadened by both the information depth of the method and ion bombardment iduced effects. The shape of the broadened profile can be determined in the dilute limit by an exponential function which is conviniently described by the decay length. The influence of the broadening effects can be minimized. Roughness effects are reduced by choosing a small film thickness. The combined effect of atomic mixing and selective sputtering decreases upon lowering the probe energy. Oxidation induced segregation plays a role in oxygen SIMS depth profiling of impurities in silicon. At present, it is not clear whether segregation can be suppressed by cooling the sample below room temperature. An interface width of 1.3 nm (10–90%) was detected by AES combined with ion sputtering at the GaAlAs/GaAs hetero-interface. A decay length of 2 nm was observed in favourable cases by SIMS.
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