Abstract
The use of variable energy (1.5 to 5.5 eV) and variable angle of incidence (45° to 85°) ellipsometry makes possible a nondestructive analysis of thin films and interfaces, described in multilayer models. This is demonstrated for the following selected cases: depth profiling of B and Se implanted in GaAs with the influence of thermal annealing, transition region between a crystalline Si substrate and a CVD deposited Si3N4 film. In this latter case, thermal nitridation of Si is examined in situ by attaching the ellipsometer to the CVD chamber and a rough transition between c‐Si and Si3N4 is confirmed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
