Abstract
With the continual reduction in semiconductor device size, the identification and location of impurities is extremely important. A Trace Element Accelerator Mass Spectrometry (TEAMS) system is being used for analysis of elemental and compound semiconductors. The TEAMS system, which was developed by the University of North Texas (UNT) and Texas Instruments, Inc. (TI), may be used for both bulk and depth profiling measurements. Computer control of magnetic and electrostatic analyzers allows automated mass scans of stable isotopes in solid materials. A low sample contamination ion source is based upon clean Si components for ion optics and magnetic analysis of the Cs sputtering beam. The TEAMS system removes molecular interferences, which are present in Secondary Ion Mass Spectrometry (SIMS), by electron stripping of molecular ions to high charge states. As a result, the TEAMS system will allow higher sensitivities for some elements than SIMS. At present, bulk sensitivities of sub ppb (1 part in 10 9 or 10 13 atoms/cm 3) are possible for many elements in the periodic table. The TEAMS system design and operation are briefly discussed. Depth profiling results for F, P, and As implanted Si are demonstrated.
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