Abstract
The RBS technique and 19F(p, αγ) 16O resonance nuclear reaction at 872.1 keV, with Γ = 4.2 keV, were used to measure the depth profiles of implanted 79Br, 132Xe and 19F in silicon samples. A special convolution procedure was used to extract the depth profiles from the RBS spectra and the experimental excitation yield curves. The range parameters, R p and Δ R p obtained in thi experiment were compared with theoretical calculations.
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