Abstract
The stopping power of 100–600 keV F +, Ar +, As +, Br + and Xe + ions in silicon have been obtained from measured range distribution obtained by NRA and RBS techniques. A deconvolution program was used in order to obtain true range distributions from the measured NRA excitation curves or RBS spectra. The total stopping powers were determined through fitting the projected ranges based on LSS transport theory to the experimentally determined projected ranges. After subtracting calculated nuclear stopping cross sections, the electronic stopping cross sections were obtained. These results indicate that the electronic stopping cross sections at low velocities may be described by the four-parameter formulae proposed previously and that deviation from the velocity-proportional electronic stopping is evident.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
