Depth profiles and damage annealing of 1.06 MeV As 2+ Implanted in silicon

Abstract

Doubly charged arsenic ions have been implanted into crystalline Si〈100〉 at an energy of 1.06 MeV and with doses of 1.2 and 2.4 × 10 15 cm −2. Both the chemical and the electrical profiles showed the presence of two peaks, which are attributed to channelling effects, as confirmed by Monte Carlo calculations. Corresponding to these peaks, two bands of lattice defects have been found by electron microscopy after an anneal at 750 °C for 30 min in a furnace. The evolution of these defects on increasing the annealing temperature up to 950 °C is presented. Good electrical activation and mobility values have been found for all the investigated temperatures.