Abstract
AbstractDepth profiles of the optical constants, carrier mobility, and carrier density of spin‐coated poly(3,4‐ethylene‐dioxythiophene):(polystyrene sulfonic acid) (PEDOT:PSS) films were investigated by real‐time spectroscopic ellipsometry (SE) characterization during argon plasma etching at atmospheric pressure. Spectra analysis revealed that homogeneous etching occurred within 10‐20 nm of the top surface, followed by the appearance of conductive PEDOT phase with a surface roughening. These findings originated from the depth profile of the PEDOT‐to‐PSS molar concentration ratio. The use of a 10‐20‐nm etched PEDOT:PSS layer improved relatively the performance of a hole‐transport layer for CuPc/C60 organic thin‐films solar cells with higher optical transmittance (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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