Abstract
Radiofrequency glow discharge optical emission spectrometry(RF-GD-OES) was used to quantitatively analyze the depth of nanometric Cr/Ni multilayers on a silicon substrate. The technique permitted rapid and accurate depth profiling of multilayers, down to the nanometer range. The analytical parameters were optimized for the RF-GDOES depth quantitative analysis of Cr/Ni multilayers on a Si substrate. To validate the RF-GD-OES results, a TEM image was obtained in addition to performing the AES and SIMS depth profiling. The findings indicate that RF-GDOES is a promising analytical tool for the accurate and rapid depth profiling of nanometric metal multilayers on semiconducting substrates.
Published Version
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