Abstract
CVD-WO3 thin films, deposited on soda lime glass substrates, are investigated by depth profile analysis in hollow cathode discharge and by Raman spectroscopy. The depth profiling of W, Al and C elements in the hollow cathode discharge clarifies that the WO3 thin film is homogeneous for both annealed and as-grown samples. The Raman spectroscopy reveals that the annealing of the sample at 500 °C transforms the WO3 film structure from amorphous into polycrystalline. Based on all results obtained the technological conditions are optimized for WO3 film fabrication. This work confirms that the hollow cathode discharge turns out to be appropriate for depth profiling of transition metal oxide thin films deposited on dielectric matrix.
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