Abstract
The computer code OKSANA is applied to calculate the depth of origin of atoms sputtered from an amorphous Si target under ion bombardment. Most simulations refer to 2 keV Ne bombardment. The emphasis is put on the comparison of the depth distributions found by computer simulation with the profiles predicted by the analytical theory which is known to overestimate the mean escape depth. It has been shown that failing to include the coarse-grain structure of an amorphous target and some simplifying assumptions concerning the generation and transport of recoils are the main reasons for high theoretical values of the mean escape depth.
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