Abstract
Silicon wafers (〈100〉, n-type) are implanted by 40 keV B+ ions to the doses of 1.2 × 1014 or 1.2 × 1015 cm−2 and then by 50 or 100 keV N+ ions to the doses in the range of 1.2 × 1014 to 1.2 × 1015 cm−2. The depth profiles of the implanted boron atoms are obtained using the 10B(n, α)7 Li nuclear reaction. The distributions of radiation defects are studied by the RBS-channeling technique. The boron depth profiles show strong inward asymmetry which may be due to resisdual channeling. Additional nitrogen implantation almost does not affect the distribution of implanted boron ions. The effects of the implantation dose and energy of both B+ and N+ ions on the resulting damage formation in the dual implanted silicon are studied. Radiation (self) annealing is observed in the case of high dose dual implantation with boron and nitrogen ions.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
