Abstract
Ba0·85Ca0·15Zr0·1Ti0·9O3 (BCZT) epitaxial films were successfully deposited on (001) Nb-doped SrTiO3 substrate, and the effects of deposition temperatures on the structure, ferroelectric property, and conduction mechanism were studied. The results of XRD and AFM verified the well epitaxial structure with smooth surfaces of the deposited BCZT epitaxial films. BCZT epitaxial films deposited at 650 °C exhibited the best ferroelectric property (2Pr = 22.91 μC/cm2, 2EC = 1702.11 kV/cm) and relatively low leakage current density (7.91 × 103 A/cm2). The conduction mechanism of BCZT films corresponds to the space-charge-limited current (SCLC) mechanism and the Fowler-Nordheim (F–N) tunneling mechanism in the low and high electric field range, respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
