Abstract
In this paper, VOX thin films were deposited on the Cu/Ti/SiO2 substrates by reactive sputtering at room temperature and annealed under vacuum with different temperature. The crystal structure and morphology of VOX films with different annealing temperatures were characterized respectively by XRD and AFM, and the electrical switching properties were tested by Semiconductor Device Analyzer. The effects of annealing temperatures on structure and morphologies were discussed. Results showed that the film as-deposited was amorphous, and with the increasing of annealing temperature, there were V2O5, V2O3 etc mixture phases in the films. AFM results indicated that the crystal particles of the VOX thin films were enlarged from 300 to 500°. The in-suit morphologies have obvious changes from RT to 75°. The device unit by films annealed under 400° can achieve reversible metal-insulator transition (MIT), whose reset and set voltage are 0.56V and 1.12V.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call