Abstract
Laser ablation deposition technique using a KrF (248 nm) excimer laser has been employed to deposit W films on Si(100) and SiO2 from W(CO)6 with high growth rate. The influence of substrate temperature on the film growth rate and resistivity has been investigated in a broad temperature range (20–500 °C) at laser fluence of 0.4 J cm−2. Film resistivities within a factor of 3 of the bulk value have been observed in the substrate temperature range of 300–500 °C. The crystal structure of the film deposited in this temperature range corresponds specifically to the α-W phase. Optical emissions from the plasma generated during the pulsed excimer laser ablation of W(CO)6 are also examined by an optical multichannel analyzer.
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